Optical and electrical properties of p-substituted-benzylidenemalononitrile thin films: Optoelectronic applications

• We have synthesized a donor-bridge-acceptor molecule.
• We investigated its electrical and photophysical properties.
• The band-gap energy of BMN film was obtained from cyclic voltammetry.
• The electrical bistability in such films is associated with a memory phenomenon.

A donor-bridge-acceptor type conjugated molecule has been successfully synthesized and characterized. The optical properties such as absorption, photoluminescence and electrical properties such as cyclic-voltammetry and J–V characteristic of p-substituted-benzylidenemalononitrile (BMN) thin films have been investigated. The BMN films shows a wide absorption in visible region, which makes it possible for application in OPV and OLED. The band gap energy of BMN thin film was obtained by experimental calculation from cyclic voltammetry. From the current–voltage characteristics, the electrical bistability in such films can be associated with a memory phenomenon. The obtained results of the materials have promising to be applicable for various optoelectronic applications.