A novel low turnoff loss carrier stored SOI LIGBT with trench gate barrier

A novel low turnoff loss carrier stored (CS) silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with trench gate barrier (CS SOI TGLIGBT) is proposed. The proposed CS SOI TGLIGBT features a trench gate inserted between the pwell and n-drift. Firstly, the trench gate acts as a hole barrier to prevent the hole from injecting directly into pwell in the on-state, which introduces carrier stored effect and realizes a uniform carriers distribution in the n-drift region, resulting in a decrease of the on-state voltage drop (Von). Secondly, due to the carrier stored effect and the assisted depleted effect induced by the trench gate, large number of carriers can be quickly removed at the initial turnoff process, leading to a decrease of turnoff loss (Eoff). The influences of gate trench barrier on Von and Eoff are investigated. Simulation results show that the proposed CS SOI TGLIGBT can achieve a 59% lower Eoff compared with the conventional SOI trench gate LIGBT at the same Von of 1.15 V.