کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1552961 1513215 2015 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Exciton binding energy in an infinite potential semiconductor quantum well-wire heterostructure
ترجمه فارسی عنوان
انرژی اتصال دهنده اکسیتون در یک ساختار نانومتری کوانتومی نیمه هادی بی نهایت بالقوه
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
An interacting electron-hole pair in a quantum well-wire is studied within the framework of the effective-mass approximation. An expansion to a 1 dimensional, quantum well model is presented to include another confinement dimension for a quasi-2 dimensional, quasi-1 dimensional quantum well-wire heterostructure. The technique is applied to an infinite well-wire confining potential. The envelope function approximation is employed in the approach, involving a three parameter variational calculation in which the symmetry of the component of the wave function representing the relative motion is allowed to vary from the one- to the two- and three-dimensional limits. Results to such a numerical calculation are presented. Quantitative comparisons with previous calculations for quantum wells is made (in the wire limit where Lz → ∞) to find a good agreement between finite and infinite potential models up to a size of 100 Å.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 86, October 2015, Pages 456-466
نویسندگان
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