Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects

• Significant improvement in the gain of the inverter circuit using this device.
• Significant improvement in the Ion/Ioff and Ion = 4.47 μA/μm.
• Reductions in the electric field for gate stack architecture due to reduction in hot-carriers.
• Improvement in transconductance of the device gm = 2.0 × 10−5 S/μm.

A 2D numerical modeling on the characteristics of a triple material gate stack gate all-around (TMGSGAA) MOSFET including quantum mechanical effects has been developed and presented. The device characteristics are obtained from the self-consistent solution of 2D Poisson-Schrödinger equation using Leibmann’s iteration method. The various characteristics of the device such as surface potential, electric field, transconductance, drain and transfer characteristics have been estimated. The effect of different high-k materials on the device characteristics has also been discussed. The numerical results are validated with ATLAS TCAD simulation results. The suitability of TMGSGAA MOSFET for circuit applications was also analyzed by implementing the device in an inverter circuit and gain value is estimated.