Optical investigation of In0.21Ga0.79As multiple quantum wells grown on (0 0 1) and (1 1 3) A GaAs substrates

• The optical properties of MQW (1 1 3) and MQW (0 0 1) have been investigated using TRPL spectroscopy.
• A blue shift of PL energy in InGaAs MQW (1 1 3) has been observed, due to the presence of piezoelectric field.
• At low temperatures, a slower exciton lifetimes of the QW transition from MQW (1 1 3) have been observed.
• Dynamical carrier and capture processes between unequal QWs have been detailed.

In this work, we have investigated the optical study of In0.21Ga0.79As multiple quantum wells (MQW) with different well thickness (LW = 30, 60 and 90 Å), grown by molecular beam epitaxy MBE on (0 0 1) and (1 1 3) A GaAs substrates. A blue-shift of energy transition is observed for the MQW grown on (1 1 3) A. This result could be explained by the presence of significant piezoelectric field inside the structure. Yet, the exciton dynamics properties have been measured by picosecond time-resolved photoluminescence (TRPL) measurements. We have found that the piezoelectric effect in MQW grown on high index plane induces slower exciton relaxation compared with those grown on (0 0 1). The PL lifetime versus temperature was performed to study the carrier transfer between the quantum wells of both samples.