Impact of thin metal layer on the optical and electrical properties of indium-doped-tin oxide and aluminum-doped-zinc oxide layers

• Ni-embedding TCO films were investigated.
• Ni insertion was significantly improved electrical performances.
• Ni insertion was substantially enhanced FOM.

The distinguished transparent conductive oxide (TCO) layers like indium-doped-tin oxide (ITO) and aluminum-doped-zinc oxide (AZO) layers were prepared in different combinations with and without thin Ni metal layer. The optical and electrical properties of prepared samples were analyzed and compared with the objective to understand the role and influence of the Ni layer in each TCO combination. The highest transmittance value of 91.49% was exhibited by prepared AZO layers. Even though if the transmittance of Ni inserting TCO layers was marginally reduced than that of the ordinary TCO samples, they exhibited balanced optical properties with enhanced electrical properties. Carrier concentration of indium doped tin-oxide and aluminum doped zinc oxide (ITO/AZO) bilayer sample is increased more than double the times when the Ni layer was inserted between ITO and AZO. Thin layer of Ni in between TCO layers reduced sheet resistance and offered substantial transmittance, so that the figure of merit (FOM) value of Ni embedding TCOs was greater than that of TCOs without Ni layer. The ITO/Ni/AZO combination provided optimum results in all the electrical properties. As compared to other TCO/metal combinations, the overall performance of ITO/Ni/AZO tri-layer combination was appreciable. These results show that the optical and electrical properties of TCO layers could be enhanced by inserting a Ni layer with optimum thickness in between them.