Modeling of the absorption properties of Ga1−xInxAs1−yNy/GaAs quantum well structures for photodetection applications

• This work reports on theoretical studies on the GaInNAs material properties.
• Effect of the In and N concentrations on the position of conduction and valence bands.
• We study the bandgap energy, lattice mismatch and absorption coefficient.
• Effect of the strained bandgap energy in the absorption coefficient.

This work reports on theoretical studies on the GaInNAs material properties (bandgap, lattice mismatch, absorption coefficient) as grown on GaAs substrate. The Band Anti-Crossing (BAC) k⋅p 8 × 8 model has been used to determine the influence of indium and nitrogen concentrations on the position of conduction and valence bands. The incorporation of nitrogen at a level lower than 5% causes the split of the conduction band. For indium and nitrogen concentrations of 38% and 3.5%, respectively, the strained bandgap energy is 0.70 eV and the absorption coefficient of indium and nitrogen-rich compounds increases significantly.