Room temperature Ge and ZnO embedded inside porous silicon using conventional methods for photonic application

In this paper we reported room temperature synthesis of embedded porous Si (PS) based structures using simple and low cost techniques of electrochemical etching and thermal evaporation. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF). The Ge and ZnO layers were deposited onto the PS by conventional thermal evaporation. Three samples prepared namely PS, Ge/PS and ZnO/Ge/PS. Structural analyses, SEM revealed that the structures contained 500–700 nm circular-pores and EDX suggested the presence of Ge and ZnO inside the pores. Photoluminescence (PL) spectra of the three samples revealed emissions peak at 380, 520 and 639 nm, respectively, with ZnO/Ge/PS displaying a high UV emission peak accompanied by low and broad green to red emission peaks. The Ge/PS sample shows emission peaks from green to red and the PS sample reveals a broad peak in the red region. These characteristics demonstrate the potential of the PS-based structures to emit light at a broader spectrum for prospective applications in optoelectronic devices.

► Embedded PS were prepared using electrochemical etching and thermal evaporation.
► SEM revealed uniform circular-pores and substantial Ge and ZnO inside the pores.
► Raman spectra showed good crystalline Ge and ZnO nanostructures inside the pores.
► PL revealed emissions from UV until red for embedded PS.