کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554566 | 1513251 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Correlating composition and luminescence in AlInGaN epilayers
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Correlating composition and luminescence in AlInGaN epilayers Correlating composition and luminescence in AlInGaN epilayers](/preview/png/1554566.png)
چکیده انگلیسی
Epilayers of the quaternary alloy AlxInyGa1âxâyN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emission wavelength. By examining statistical correlations in this data, the interdependence of the fractions of constituent binary compounds, together with the associated changes in emission characteristics, can be clarified without the need to grow a systematic series of samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 45, Issues 4â5, AprilâMay 2009, Pages 151-155
Journal: Superlattices and Microstructures - Volume 45, Issues 4â5, AprilâMay 2009, Pages 151-155
نویسندگان
P.R. Edwards, R.W. Martin, K. Bejtka, K.P. O'Donnell, S. Fernández-Garrido, E. Calleja,