کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554733 | 998804 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The performances of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors (MODFETs) are demonstrated and compared. In the n-channel (p-channel) device, an extremely high gate turn-on voltage of 1.7 (2.0) V is measured due to the pn depletion in the camel-like gate region and the presence of a large conduction (valence) band discontinuity at the InGaP/InGaAs heterostructure. In addition, a maximum drain saturation current of 425Â mA/mm (â345Â mA/mm) and a maximum transconductance of 85Â mS/mm (63Â mS/mm) are obtained for the n-channel (p-channel) device. These excellent characteristics indicate that the devices that are studied are promising for signal amplifiers and inverter circuit applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issue 2, February 2008, Pages 73-80
Journal: Superlattices and Microstructures - Volume 43, Issue 2, February 2008, Pages 73-80
نویسندگان
Jung-Hui Tsai, Tzu-Yen Weng, King-Poul Zhu,