کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1554972 | 1513255 | 2007 | 7 صفحه PDF | دانلود رایگان |
Chemical etching and removal of the silicon substrate was used for the creation of optically pumped lift-off InGaN/GaN multiple quantum well (MQW) lasers from heterostructures grown on silicon substrate by MOVPE. Luminescence and laser properties of these heterostructures on silicon substrates as well as those of MQWs lifted-off from their substrate by chemical etching were investigated. The lowest value of the lasing threshold of the lift-off lasers at room temperature was about 205 kW/cm2 for a laser wavelength of 463 nm and about 360 kW/cm2 for a wavelength of 475 nm. It was shown theoretically that the reduction of internal losses, caused by the absence of absorption in the substrate (resulting from its removal) is most significant for the high order modes having lower values of mirror losses and can lead to a 50% reduction of the threshold (or material gain in InGaN necessary to achieve the threshold).
Journal: Superlattices and Microstructures - Volume 41, Issues 5–6, May–June 2007, Pages 400–406