کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555260 | 1513257 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT](/preview/png/1555260.png)
A new AlGaN/GaN high electron mobility transistor (HEMT) employing Ni/Au Schottky gate oxidation and benzocyclobutene (BCB) passivation is fabricated in order to increase a breakdown voltage and forward drain current. The Ni/Au Schottky gate metal with a thickness of 50/300 nm is oxidized under oxygen ambient at 500 ∘C and the highly resistive NiO is formed at the gate edge. The leakage current of AlGaN/GaN HEMTs is decreased from 4.94 μA to 3.34 nA due to the formation of NiO. The BCB, which has a low dielectric constant, successfully passivates AlGaN/GaN HEMTs by suppressing electron injection into surface states. The BCB passivation layer has a low capacitance, so BCB passivation increases the switching speed of AlGaN/GaN HEMTs compared with silicon nitride passivation, which has a high dielectric constant. The forward drain current of a BCB-passivated device is 199 mA /mm, while that of an unpassivated device is 172 mA /mm due to the increase in two-dimensional electron gas (2DEG) charge.
Journal: Superlattices and Microstructures - Volume 40, Issues 4–6, October–December 2006, Pages 562–566