Structural and electronic properties of sulphur-doped boron nitride nanotubes

First-principles calculations based on density functional theory were performed to study the structural and electronic properties of sulphur substitution-doped boron nitride (BN) nanotubes, using the theory as implemented in SIESTA code, which uses non-conserving pseudo-potentials in fully non-local form and atomic orbitals as the basis set. The generalized gradient approximation (GGA) was used for the exchange–correlation (XC) potential. The tube selected was a (10, 0) BN nanotube that fell in the range of energy gap independent of the tube diameter. The electronic and structural properties for sulphur substitution in the boron and the nitrogen sites were studied. The structural arrangement in equilibrium conditions for S shows an outward radial deformation around the sulphur atom in the tube. The bandgap of the pristine BN nanotubes was found to be significantly modified on doping.

► We model S doping in a boron nitride nanotube (BNNT) using density functional theory.
► Remarkable changes are observed in the electronic behavior of BNNTs after doping.
► BNNTs behave as an impurity-doped semiconductor if the doping is at the B site and have metallic behavior if the doping is at the N site.