کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595365 | 1515720 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Realization of the intrinsic p-type ZnO thin film by SSCVD
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Intrinsic p-type ZnO thin films were first fabricated on silicon(100) substrate by a single source chemical vapor deposition technique, and characterized by the Hall measurements. The optimal results give a Hall mobility of 14.6 cm2/V s, a hole concentration of 2.27×1015 cm−3. Their p-type conductivities were also confirmed by X-ray photoelectron spectroscopy analyses, and the results revealed that the p-type films had an excess of oxygen in contrast to normal n-type ZnO films which had an excess of zinc. And the photoluminescence spectroscopy indicated that these films had defect zinc vacancies and showed significantly stronger ultraviolet emission compared with the n-type films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 143, Issues 8–9, August 2007, Pages 378–381
Journal: Solid State Communications - Volume 143, Issues 8–9, August 2007, Pages 378–381
نویسندگان
L.P. Dai, H. Deng, J.J. Chen, M. Wei,