Study on the resistive switching properties of epitaxial La0.67Sr0.33MnO3 films

The hysteretic and reversible polarity-dependent resistive switching effect has been studied in epitaxial La0.67Sr0.33MnO3 (LSMO) films under DC bias stress and voltage pulses. A distinct current-voltage characteristic of the Ag/LSMO system with pronounced nonlinearity, asymmetry and hysteresis was observed, which is considered to be a precursor sign of the resistance switching. The pulsed voltage amplitude and duration dependence of the nonvolatile resistive switch were provided. Reproducible switching properties, involving non-symmetrical R-V hysteresis loop, active pulse width window and stepwise multilevel switchable capability, demonstrate well controllability with respect to future nonvolatile memory applications.