کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595606 | 1002783 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Femtosecond laser-induced ZnSe nanowires on the surface of a ZnSe wafer in water
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present a simple route for ZnSe nanowire growth in the ablation crater on a ZnSe crystal surface. The crystal wafer, which was horizontally dipped in pure water, was irradiated by femtosecond laser pulses. No furnace, vacuum chamber or any metal catalyst were used in this experiment. The size of the nanowires is about 1–3 μm long and 50–150 nm in diameter. The growth rate is 1–3 μm/s, which is much higher than that achieved with molecular-beam epitaxy and chemical vapor deposition methods. Our discovery reveals a rapid and simple way to grow nanowires on designed micro-patterns, which may have potential applications in microscopic optoelectronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 141, Issue 11, March 2007, Pages 635–638
Journal: Solid State Communications - Volume 141, Issue 11, March 2007, Pages 635–638
نویسندگان
Tianqing Jia, Motoyoshi Baba, Min Huang, Fuli Zhao, Jianrong Qiu, Xiaojun Wu, Masaki Ichihara, Masayuki Suzuki, Ruxin Li, Zhizhan Xu, Hiroto Kuroda,