کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596839 | 1002857 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As quantum well samples from 1.5 to 60Â K in an applied magnetic field up to 13Â T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 142, Issue 7, May 2007, Pages 393-397
Journal: Solid State Communications - Volume 142, Issue 7, May 2007, Pages 393-397
نویسندگان
W.Z. Zhou, Z.M. Huang, Z.J. Qiu, T. Lin, L.Y. Shang, D.L. Li, H.L. Gao, L.J. Cui, Y.P. Zeng, S.L. Guo, Y.S. Gui, N. Dai, J.H. Chu,