کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1607711 | 1516237 | 2016 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Forming-free electrochemical metallization resistive memory devices based on nanoporous TiOxNy thin film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We demonstrate a forming-free electrochemical metallization resistive memory device (Ag/TiOxNy/Pt) based on the nanoporous titanium oxynitride (TiOxNy) thin film. Due to the nanoporous structure of TiOxNy, Ag atoms can migrate into the film during the Ag electrode evaporation process, resulting in a pre-formed Ag conductive filament inside the switching layer. This is responsible for the forming-free resistive switching behavior. Subsequently, resistive switching with attractive performance is achieved after a reset process, including good endurance, low operation voltages, and fast switching speed. The forming-free and reliable switching characteristics suggest that nanoporous TiOxNy thin film is one of the promising material candidates for future nonvolatile memory applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 656, 25 January 2016, Pages 612-617
Journal: Journal of Alloys and Compounds - Volume 656, 25 January 2016, Pages 612-617
نویسندگان
Xiaoning Zhao, Mengyao Li, Haiyang Xu, Zhongqiang Wang, Cen Zhang, Weizhen Liu, Jiangang Ma, Yichun Liu,