Enhancement of dielectric barrier layer properties by sol-gel and PECVD stacks

• Dielectric barrier layer for flexible metallic substrates has been developed.
• SiOx based on sol-gel process showed a novel chemical formulation.
• The dielectric double barrier layer (PECVD & solgel) exhibits a breakdown voltage about 1000 V for a 4 μm thick stack.
• Dielectric barrier layer was capable to reduce the surface roughness by 40–50%.

Thin-film PV modules grown on flexible, light weight, thermally stable and low cost substrates such as stainless steel foil, are an attractive product for solar market applications. When metal foils are used as substrate, it is essential to deposit a dielectric barrier layer to isolate electrically and chemically the thin-film solar cells from the substrate. In this work, SiOx stacks deposited on ‘rough’ stainless steel by a combination of a new sol-gel formulation and a Plasma Enhanced Chemical Vapor Deposition (PECVD) deposition step are reported as a suitable dielectric barrier layer candidate. Using these SiOx multilayers, a smooth and homogeneous film was achieved. X-ray diffraction (XRD) analysis showed that back contact of the solar cell (based on Molybdenum) is not affected by the presence of the barrier layer. Moreover, according to X-ray photoelectron spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) measurements, this approach led to excellent barrier layer properties against the diffusion of impurities from the stainless steel. A complete electrical characterization of these dielectric barrier layers was also carried out showing good electrical insulation.

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