Fabrication and characterization of ZnO-doped Nd(Co1/2Ti1/2)O3 thin films prepared by rf magnetron sputtering

Optical and dielectric properties, and microstructures of ZnO-doped Nd(Co1/2Ti1/2)O3 thin films prepared by the rf-magnetron sputtering on ITO/glass substrates at different substrate temperatures have been investigated. All films exhibited the ZnO-doped Nd(Co1/2Ti1/2)O3 orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with an increase in substrate temperature. At a substrate temperature of 350 °C, the ZnO-doped Nd(Co1/2Ti1/2)O3 films possess a dielectric constant of 26.9 at 1 kHz, a dissipation factor of 0.02 at 1 kHz, a leakage current density of 3.57 × 10− 9 A/cm2 at an electrical field of 10 kV/cm and an optical bandgap of 4.55 eV.

► The properties of ZnO-doped Nd(Co1/2Ti1/2)O3 thin films were not reported by other researchers.
► The grain size and the deposition rate of those films increased with an increase in substrate temperature.
► ZnO-doped NCT films possess a dielectric constant of 26.9 at 1 kHz and a dissipation factor of 0.02 at 1 kHz.
► ZnO-doped NCT films possess a leakage current density of 3.57 × 10− 9 A/cm2 and an optical bandgap of 4.55 eV.