کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1657715 | 1517647 | 2013 | 5 صفحه PDF | دانلود رایگان |
ZnO nanorod structures on InGaN light-emitting diode (LED) structures were grown by inserting the aluminum zinc oxide (AZO) seed layers through a sputtering and a pulsed laser deposition (PLD) processes. The well-aligned ZnO nanorods on the PLD-AZO seed layer had a higher crystalline quality and a preferred orientation along (002) plane because the X-ray intensity of (002) peak was stronger than that of (100) and (101) peaks. The inter-planar spacing in a high resolution transmission electron microscopy image is approximately 0.26 nm corresponding to (002) plane of the ZnO nanorod structure. The strong photoluminescence intensity of the ZnO nanorods on the PLD-AZO seed layer was observed at 378 nm. The light output power had a 54% enhancement for the InGaN LEDs with the ZnO nanorod structures on the PLD-AZO seed layer compared with a conventional LED structure.
► The crystalline property of AZO seed had a significant influence on ZnO nanorods.
► The optical properties of ZnO nanorod on different AZO seed layers were analyzed.
► The ZnO nanorods on the AZO layer had a preferred orientation along (002) plane.
► High light output power of InGaN light-emitting diode with ZnO-nanorod structure.
Journal: Surface and Coatings Technology - Volume 231, 25 September 2013, Pages 161–165