Characterization of p-type CuAlO2 thin films grown by chemical solution deposition

Single phase p-type CuAlO2 thin films were synthesized through the chemical solution deposition method. The effects of post annealing temperature on the micro-structural, morphological and electrical properties have been studied. Via the optimized annealing treatment, the Hall effect measurements indicate that the CuAlO2 film belongs to the p-type semiconductor with intrinsic hole carriers of 6.71 × 1016 cm− 3. The optical direct bandgap of the CuAlO2 film was estimated to be 3.48 eV by room temperature photoluminescence measurement, while the transmittance in the visible region was as high as 70%.

► Single phase CuAlO2 thin films were synthesized through chemical solution deposition.
► The crystalline and conductivity improved with increasing annealing temperature.
► Hall effect measurements indicate that the CuAlO2 film is the p-type semiconductor.
► Optical transmittance spectra exhibit high transparency in the visible region.