Effect of oxygen partial pressure on the electrical properties of the La0.5Sr0.5CoO3/Al-doped ZnO thin film heterojunctions

► The p-type LSCO with n-type AZO diodes were obtained by r. f. magnetron sputter. ► The LSCO/AZO diodes have good contact between LSCO films with AZO films. ► The diodes showed rectifying behavior in the backward mode for all of the samples. ► The diode has the lowest resistance under Ar:O2 sputter gas ratio of 10:5 (sccm). ► The turn-on voltage is obtained around 1.5 V for all of the samples.