Investigation of pulsed ultraviolet laser annealing of Sb/SnO2 thin films on the structural, optical and electrical properties

Sb/SnO2 bi-layer films were prepared using ion beam sputtering deposition (IBSD) and radio frequency (RF) magnetron sputtering deposition. The optimal parameters of SnO2 thin films were found to be dependent on the processing conditions of vacuum pressure and flow ratio of O2/(O2 + Ar). The as deposited bi-layer films were treated by ex situ pulsed ultraviolet laser beam at 355 nm for the assistance of Sb-ion with SnO2 interface. This paper takes a closer look at the characteristics of the laser irradiation effect of Sb/SnO2 bi-layer films on the optical and electrical behavior and the interface microstructure of Sb/SnO2 by high resolution transmission electron microscopy (HR-TEM). After UV pulse laser irradiation of bi-layer films, crystalline Sb between amorphous Sb and SnO2 nanocrystalline thin films was observed.

► The conductivity of bi-layer Sb/SnO2 films is higher than as-deposited SnO2 films.
► UV pulse laser irradiation enhanced crystallization of Sb.
► UV pulse laser irradiation resulted in the interdiffusion in the interface of Sb/SnO2.
► The optical transmittance of laser-irradiated Sb/SnO2 was improved.