کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669807 | 1008889 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of strain engineering on InGaAs NMOSFET with an InGaAs alloy stressor
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Stress distributions in the In0.53Ga0.47As channel regions of the In0.4Ga0.6As source/drain (S/D) with various lengths and widths were studied with 3D ANSYS simulations. The resulting mobility improvement was analyzed. Tensile stress along the transport direction was found to dominate mobility improvement. Stress along the vertical direction perpendicular to the gate oxide was found to affect mobility the least. However, for strained InGaAs NMOSFETs with width between 0.5 and 3 μm, the compressive stress along the width direction makes considerable contribution to mobility improvement and cannot be neglected. The impact of width on performance improvements such as the mobility gain was analyzed with TCAD simulations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 5, 30 December 2010, Pages 1738–1742
Journal: Thin Solid Films - Volume 519, Issue 5, 30 December 2010, Pages 1738–1742
نویسندگان
Shu-Tong Chang, P.-H. Sun, Chang-Chun Lee,