Microwave irradiation on a-axis oriented Y123/Pr123 two-stacked Josephson junctions device

Two-stacked submicron Josephson junctions devices were fabricated in a-axis oriented YBaCu3O7 and PrBa2Cu3O7 (Y123/Pr123) multi layered thin films using focused ion beam milling technique. The transition temperature and critical current density (Jc) of the device are about 83 K and 5 × 105 A/cm2 at 20 K, respectively. The device was irradiated with external microwave of 10 GHz and studied at 20 K. The microwave induced voltage steps are observed in I-V characteristics. The supercurrent branch become resistive above a certain microwave power and also the Jc was suppressed as we increased the microwave power. Magnetic field modulation of critical current shows periodicity of about 2000 gauss correspond to the Josephson junctions in the stack.