کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1787709 1023450 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-voltage driven carbon nanotube field emission lamp
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Low-voltage driven carbon nanotube field emission lamp
چکیده انگلیسی
CNTs were grown on a silicon substrate using the RAP process and PECVD system. The resulting CNT emitters showed the excellent field emission characteristics. For low-voltage driving field emitter fabrication, the CNTs were connected to the drain part of an external MOSFET. A low gate voltage of the MOSFET can control the field emission current of CNTs, instead of a high anode voltage. The emission current of CNTs controlled by the MOSFET was very stable in terms of both the current switching and the current stability of 100 h.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 4, Supplement, July 2011, Pages S86-S89
نویسندگان
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