Laser short-pulse heating of silicon film with the presence of metallic substrate

Laser interaction of silicon film located at he top of metallic substrate is examined and energy transport in electron and lattice sub-systems are formulated using the electron kinetic theory approach. The simulations are repeated for different substrate materials, namely gold, silver, and copper. It is found that electron temperature in the silicon film rises in the vicinity of the silicon–metallic substrate interface, despite the fact that energy absorption from the irradiated filed is significantly low in the silicon film. Lattice site temperature rises rapidly in the early heating period at the interface. In addition, lattice site temperature increase is higher in the silicon film than that corresponding to the metallic substrate.