کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789245 | 1023497 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of ITO films deposited by RF superimposed DC magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ITO films were deposited using a RF superimposed DC magnetron sputtering system with an ITO (90.0 wt% In2O3 and 10.0 wt% SnO2) single ceramic target at either room temperature or the crystallization temperature of ITO films (170 °C). The total sputtering power (DC + RF) was maintained at 70 W, and the RF portion of the total power was varied from 0% to 100%. The discharge voltage and deposition rate decreased with increasing RF portion of the total power. The (2 2 2) X-ray diffraction peak showed the highest intensity at a RF/(RF + DC) power ratio of 50% with a total power of 70 W. The ITO film deposited at a RF/(RF + DC) power ratio of 50% at 170 °C showed relatively low resistivity (2.52 Ã 10â4 Ω cm).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 3, Supplement, May 2009, Pages S262-S265
Journal: Current Applied Physics - Volume 9, Issue 3, Supplement, May 2009, Pages S262-S265
نویسندگان
Se Il Kim, Sang Hyun Cho, Sung Ryong Choi, Han Ho Yoon, Pung Keun Song,