Numerical studies on PACVD processes used for TiN multifunctional films using metal organic precursors

In this study, we performed a numerical simulation of the low-temperature thin-film growth of TiN layers in a plasma-assisted MOCVD reaction chamber for the purpose of eventual scale-up. Tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT) is commonly employed as a precursor for TiN layers to avoid chlorine contamination on the substrate. A reaction mechanism of TiN layer formation from TDMAT/TDEAT under the plasma-activated condition suggested by the mass spectrum analysis is employed for numerical calculations. This study is expected to make significant contributions to the understanding of the plasma-activated TiN reaction pathways, which are not yet clearly understood. The deposition rate is dependent on the process parameters such as the flow rate, pressure and plasma power, as well as the concentration gradient near the substrate. In this study, the multiple parameters described above are examined through numerical analysis to determine the deposition rate as well as to provide optimal processing conditions.