Structural characterization of Mn+-implanted GaSb crystals

Implantation creates an opportunity for creation of ferromagnetic MnSb inclusions, which may be of interest for application in spintronics. Three sets of Mn-ion implanted (0 0 1) and (1 1 1) GaSb crystals prepared at different implantation and annealing conditions were investigated by X-ray diffraction methods applying both the standard laboratory source and synchrotron radiation. Polycrystalline phase of GaSb, formed as a result of GaSb matrix damage, was detected for all samples. For the same samples Sb and MnO2 inclusions were also observed. The phase composition of the samples is found to depend mainly on the energy and dose of Mn ions during the implantation process. For the lowest Mn dose, the layered structure was found. The strain caused by implanted buried layer depends on substrate temperature during implantation; an increased implantation temperature leads to strain relaxation.