Keywords: Public pensions; GASB; State budgets; Pension policy; Board governance;
مقالات ISI (ترجمه نشده)
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Keywords: Discount rate; GASB; Pension accounting; Epistemic community; Standard setting; Financialization;
Keywords: Municipal dissolution; Going concern; Financial distress; GASB; Governmental accounting;
Keywords: Swift iron ion; GaSb; Spectroscopic ellipsometry; AFM; UV-VIS-NIR;
Keywords: Thermophotovoltaic; Tandem cell; GaInAsSb; GaSb; Efficiency;
Keywords: Standard setting; Ethics; GASB; Public pensions; Experts; Lay-citizens; Lay-experts; Policy making
Low dislocation density MBE process for CdTe-on-GaSb as an alternative substrate for HgCdTe growth
Keywords: Infrared materials; HgCdTe; Alternative substrates; GaSb; Molecular beam epitaxy;
Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers
Keywords: Threading dislocation density; Thermophotovoltaic cell; Solar cell; GaSb;
MBE growth of high quality HgCdSe on GaSb substrates
Keywords: Infrared materials; HgCdSe; GaSb; Molecular beam epitaxy;
Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications
Keywords: GaSb; Thermo-photovoltaic cell; p-n junction; J(V) characteristics; Spectral response; Barrier height; AMPS-1D; Light conditions;
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Keywords: GaSb; Quantum dot; Scanning transmission electron microscopy; Thermal annealing;
MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors
Keywords: A3. MBE; HgCdTe; Alternative substrate; GaSb; EPD; Lifetime;
Regular ArticleGaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon
Keywords: Nanocrystalline materials; Crystal structure; Heteroepitaxy; Transmission electron microscopy; GaSb;
Biocompatibility of GaSb thin films grown by RF magnetron sputtering
Keywords: GaSb; Thin film; Biocompatibility; Stability; Semiconductor; Sputtering;
Low frequency noise investigation of 2-3 μm GaSb-based laser diodes
Keywords: Cross-correlation coefficient; Electrical noise; Fluctuation; GaSb; Mid-infrared laser diode; Optical noise;
GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications
Keywords: 2DHG; GaSb; Hole mobility; Lattice mismatch; III-V CMOS;
The electronic structures and ferromagnetism of Fe-doped GaSb: The first-principle calculation study
Keywords: GaSb; Magnetic semiconductor; Ferromagnetism; The First-principles calculation; Curie temperature; GGA+U;
Thermally assisted oxidation of GaSb(100) and the effect of initial oxide phases
Keywords: GaSb; Oxidation; Synchrotron radiation; Photoelectron spectroscopy; Core-level shifts;
Development of InSb dry etch for mid-IR applications
Keywords: Inductive coupled plasma; Etching; III-V semiconductors; InSb; GaSb; Microfabrication;
Aspects of native oxides etching on n-GaSb(1Â 0Â 0) surface
Keywords: GaSb; Native oxides; Sputtering; Etching; Annealing; ARXPS;
Fabrication of GaSb quantum rings on GaAs(0Â 0Â 1) by droplet epitaxy
Keywords: A1. Nanostructures; A3. Droplet epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; GaSb;
Improved surface and electrical properties of passivated GaSb with less alkaline sulfide solution
Keywords: GaSb; Sulphurization; X-ray photoelectron spectroscopy (XPS); Native oxides; Au Schottky barrier diodes (SBDs);
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process
Keywords: Rare earth oxide; Common gate stacks; III-V; GaSb; Ge; CMOS;
Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays
Keywords: Superlattice; GaSb; Long-wavelength infrared detector; Focal plane array;
Defect formation on the GaSb (001) surface induced by hydrogen atom adsorption
Keywords: A. Hydrogen; D. Defects; E. Density functional theory; GaSb;
Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response
Keywords: GaSb; Nanowires; Flexible photodetectors; Broad spectral;
Formation of self-organized nano-surfaces on III–V semiconductors by low energy oxygen ion bombardment
Keywords: Ion beam sputtering; GaAs; GaSb; InSb; Surface patterning
A novel zinc diffusion process for the fabrication of high-performance GaSb thermophotovoltaic cells
Keywords: Zinc diffusion; GaSb; Thermophotovoltaic cells;
Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials
Keywords: III/V materials; Aminopropylsilane; Surface passivation; NEXAFS; XPS; InAs; GaSb;
Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition
Keywords: GaSb; Hydrogen plasma; Atomic layer deposition; TMA; XPS; III-V semiconductors;
Nondegenerate two-photon absorption in GaSb
Keywords: Nondegenerate two-photon absorption; Optical nonlinearities; Nonlinear index of refraction; Time-resolved pump-probe; GaSb;
Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE
Keywords: MBE; Strained-layer superlattices; nBn; 100 mm substrates; GaSb; IR photodetectors
The electrical characteristics of Ni/n-GaSb Schottky diode
Keywords: Nickel; GaSb; Schottky diode; Barrier height; Gaussian distribution
Enhanced hole mobility and density in GaSb quantum wells
Keywords: Molecular beam epitaxy; Quantum wells; Semiconducting III–V materials; Field-effect transistors; GaSb
In-situ probing of near and below sputter-threshold ion-induced nanopatterning on GaSb(1 0 0)
Keywords: GaSb; Nanopatterning; In-situ surface characterization; Ion sputtering
Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness
Keywords: InSb; GaSb; Nanodots; Atomic force microscopy; Scanning electron microscopy; Auger electron spectroscopy;
Development of porous structures in GaSb by ion irradiation
Keywords: GaSb; Ion damage; Porous semiconductors
Photoconduction spectroscopy of p-type GaSb films
Keywords: GaSb; Photoconductivity; Lifetime; Recombination; Concentration
Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution
Keywords: Scanning electron microscopy; X-ray photoelectron spectroscopy; Sulphurization; Native oxides; GaSb; Au Schottky barrier diodes (SBDs)
Study of interfaces chemistry in type-II GaSb/InAs superlattice structures
Keywords: Superlattice; GaSb; Surface; Interface; X-ray photoelectron spectroscopy
Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios
Keywords: Quantum dots; GaSb; Thermal annealing; Photoluminescence; Molecular beam epitaxy; III–V semiconductors
Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer
Keywords: GaSb; InAs passivation; Interface trap states; Al2O3; MOSCAP
Study of Interfaces Chemistry in Type-II GaSb/InAs Superlattice Structures
Keywords: superlattice; GaSb; surface; interface; X-ray Photoelectron Spectroscopy;
Structural characterization of Mn+-implanted GaSb crystals
Keywords: GaSb; Implantation; Spintronics; X-ray diffraction;
Three dimensional atom probe imaging of GaAsSb quantum rings
Keywords: GaSb; Quantum ring; Atom-probe tomography; Transmission electron microscopy;
In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution
Keywords: XPS; Atomic layer deposition; Al2O3; GaSb; High mobility substrates;
InAs/GaSb superlattice based long-wavelength infrared detectors: Growth, processing, and characterization
Keywords: Infrared detector; InAs; GaSb; Antimonide; Superlattice
Antimonide superlattice complementary barrier infrared detector (CBIRD)
Keywords: Infrared detector; InAs; GaSb; Antimonide; Unipolar barrier; Superlattice
Structural and magnetic properties of GaSb:MnSb granular layers
Keywords: Granular structures; GaSb; MnSb; Ferromagnetism; Spintronics; X-ray diffraction
Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence
Keywords: GaSb; Thermophotovoltaics; Photoluminescence