کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4758800 | 1420655 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as an alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger short-circuit currents, it is also observed that flat solar cell architectures allow for passivation of the V2O5/n-Si interface, giving significant carrier lifetimes of 200 μs (equivalent to a surface recombination velocity of Seff ~140 cm sâ1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ÎΦTMO occurs during the heterojunction formation with the consequent dipole layer enlargement Î'=Î+ÎΦTMO. Our results provide new insights into the TMO/c-Si contact energetics, carrier transport across the interface and surface recombination allowing for further understanding of the nature of TMO/c-Si heterojunctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 168, August 2017, Pages 221-226
Journal: Solar Energy Materials and Solar Cells - Volume 168, August 2017, Pages 221-226
نویسندگان
Osbel Almora, Luis G. Gerling, Cristóbal Voz, Ramón Alcubilla, Joaquim Puigdollers, Germà Garcia-Belmonte,