کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4758841 | 1420657 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly efficient epitaxial Ge solar cells grown on GaAs (001) substrates by MOCVD using isobutylgermane
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
Single-junction Ge solar cells have been epitaxially grown on GaAs (001) substrates by a low pressure metalorganic chemical vapor deposition using isobutylgermane. Various growth conditions have been studied to reduce the high doping level of over 1Ã1019 cmâ3 of the p-type Ge epitaxial layer, which is detrimental to the minority carrier collection efficiency. By increasing the growth rate and employing a discontinuous doping technique, the p-type doping level of the epitaxial Ge layer has been lowered to 2Ã1018 cmâ3, and the hole mobility increased from 44 to 162 cm2/V s. A high power conversion efficiency of 6.72% can be achieved under AM1.5 G illumination by the epitaxial Ge solar cell with the lowered doping level in the p-type Ge base region. The spectral response of the epitaxial Ge solar cell with a 5 µm thick base layer is good enough to use for InGaP/GaAs/Ge triple-junction solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 166, July 2017, Pages 127-131
Journal: Solar Energy Materials and Solar Cells - Volume 166, July 2017, Pages 127-131
نویسندگان
Youngjo Kim, Kangho Kim, Chang Zoo Kim, Sang Hyun Jung, Ho Kwan Kang, Won-Kyu Park, Jaejin Lee,