Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1 ×-nm patterning in isomorphic and anamorphic lithography

Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1 ×-nm patterning in isomorphic and anamorphic lithography

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 181, 5 September 2017, Pages 1-9

Ki-Ho Ko, Yongseung Moon, Changyeong Jeong, Heebom Kim, Chan-Uk Jeon, Hye-Keun Oh,