Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 112-115

A. Stesmans, V.V. Afanas'ev,