Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1 − xSnx, SiyGe1 − x − ySnx) with Al2O3

Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1 − xSnx, SiyGe1 − x − ySnx) with Al2O3

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 141-144

V.V. Afanas'ev, C. Schulte-Braucks, S. Wirths, J. Schubert, D. Buca,