Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric

Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 240-244

Hoon Hee Han, Donghwan Lim, Andrey Sokolov Sergeevich, Yu-Rim Jeon, Jae Ho Lee, Seok Ki Son, Changhwan Choi,