کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4970956 | 1450304 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Focused ion beam implantation for the nucleation of self-catalyzed III-V nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further optimize the growth, the substrate after implantation was analyzed via atomic force microscopy, which indicated that sputtering depth had a strong influence on the subsequent nanowire growth. Lower beam voltage accelerations led to beam defocusing and thereafter better growth, while focused, high-acceleration beams led to a larger sputtering depth, worse growth and more tilted nanowire growth. The optical quality of the nanowires was evaluated using spatially resolved photoluminesence measurements at room temperature.
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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 177, 5 June 2017, Pages 93-97
Journal: Microelectronic Engineering - Volume 177, 5 June 2017, Pages 93-97
نویسندگان
Suzanne Lancaster, Martin Kriz, Markus Schinnerl, Donald MacFarland, Tobias Zederbauer, Aaron Maxwell Andrews, Werner Schrenk, Gottfried Strasser, Hermann Detz,