کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005904 1461377 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Homoepitaxial diamond chemical vapor deposition for ultra-light doping
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Homoepitaxial diamond chemical vapor deposition for ultra-light doping
چکیده انگلیسی
Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial diamond growth without formation of non-epitaxial crystallites. Under these conditions, unintentionally incorporated nitrogen was suppressed well below 1011 cm-3. By adding silicon or boron during growth with their ratio to carbon of below 1 ppb, formation of single SiV color center in homoepitaxial diamond and deposition of lightly doped p-layer was achieved with the concentration of 1015 cm-3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 197-202
نویسندگان
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