کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005938 | 1461380 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, we performed an inductively coupled plasma (ICP) etching of SiC substrates using different masks including SiO2, Ni, Ni/SiO2 and Ni/Al2O3, and the properties of trenches were systemically analyzed. In comparison with other three masks, Ni/Al2O3 mask prevented contamination of F or Ni element from diffusion into SiC, and achieved the optimized trench morphology with a surface roughness of 0.2Â nm, steep sidewall and no micro-trench at the corner. Al2O3 dielectric films were deposited on trenches by plasma enhanced atomic layer deposition (PEALD), and its critical breakdown electrical field was much higher with Ni/Al2O3 mask, which could reach 7.7Â MV/cm. So it was believed that Ni/Al2O3 mask ensured the formation of SiC trench with superior morphology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 67, 15 August 2017, Pages 104-109
Journal: Materials Science in Semiconductor Processing - Volume 67, 15 August 2017, Pages 104-109
نویسندگان
Jingjie Li, Xinhong Cheng, Qian Wang, Li Zheng, Lingyan Shen, Xinchang Li, Dongliang Zhang, Hongyue Zhu, DaShen Shen, Yuehui Yu,