کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006007 | 1461379 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of pre-polishing process on site flatness values of polished wafers
ترجمه فارسی عنوان
تاثیر فرآیند پس از جراحی در مقادیر مسطح بودن ورقه های جلایی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
The preparation of semiconductor silicon polished wafer is a multi-stage manufacturing process. This paper analyzed the influence of polished wafers' SFQR (Site flatness front least square range) values with different pre-polishing process. In this study, the pre-polishing processes included dual-side lapping & etching, dual-side grinding and back-side polishing. Among them, the etching process was divided into caustic etching and acid etching with different removal amount and different rotation speed. The experimental results show that different pre-polishing processes have significant effects on SFQR values of polished wafers. Caustic etching, dual-side grinding and back-side polishing are more suitable for polished wafer's SFQR, while the center area of acid etching wafers show worse polished wafer's SFQR due to the etching mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 68, September 2017, Pages 15-20
Journal: Materials Science in Semiconductor Processing - Volume 68, September 2017, Pages 15-20
نویسندگان
Genghang Zhong, Yongduo Ning, Qigang Zhou, Yongzhi Bian, Xin Wang, Xiang Qu, Lei Wang, Erjing Zhao,