کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006179 | 1461385 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The tunnel field-effect transistor (TFET), which utilises the band-to-band tunnelling mechanism for current conduction, provides the ability to achieve extremely low subthreshold swing (<60Â mV/dec) and very low off-current, thus offering a performance advantage over conventional inversion-mode metal-oxide-semiconductor field effect transistors (MOSFETs) for the ultra-low power and ultra-low voltage operation for the next generation of transistors. In particular, the optimisation of the TFET architecture and material composition is very important because the full potential of the TFET is not yet uncovered. In this work homo- and hetero-structure nanowire TFETs, based on Si, Ge and SiGe materials, have been investigated using device simulation, for the design of source and drain doping profiles, with nanowire diameters down to 5Â nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 62, May 2017, Pages 201-204
Journal: Materials Science in Semiconductor Processing - Volume 62, May 2017, Pages 201-204
نویسندگان
Francesco Settino, Felice Crupi, Subhajit Biswas, Justin D. Holmes, Ray Duffy,