کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5006216 1461390 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures
چکیده انگلیسی
The strain relaxation during the Ge growth on Si(100) occurs vikia surface diffusion and Si-Ge intermixing at temperatures below 800 °C. The Ge diffusion into the Si substrate is an additional process at higher temperatures. We found that, if its rate is higher than the Ge deposition rate, the island formation is not realized. We determined the critical Ge deposition rate as a function of the temperature in the range of 840-960 °C, at which the dynamic equilibrium between the growth of islands and their decay through the diffusion takes place. The islands grown in the conditions close to the dynamic equilibrium are ordered with a distance between them of about 1 µm and they form a smoothed surface morphology. These are indicative of the surface layer strain uniformity. The islands have a SiGe composition which, in the direction parallel to the sample surface, is more uniform in comparison with the islands grown at lower temperatures. The results show that the use of high temperatures essentially improves the conditions for the heterostructure self-organization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 57, January 2017, Pages 18-23
نویسندگان
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