Electrical characterization of triple barrier GaAs/AlGaAs RTD with dependence of operating temperature and barrier lengths

In this article, we present a model of Triple barrier Resonant tunneling diodes (TBRTDs) and characterize its electrical properties and their dependence of operating temperature and barrier length associated with varying structural parameters of the device. This paper also demonstrates the potential impact of doping concentration on current density of the device. Furthermore, Local density of states (LDOS) and transmission coefficient at various operating temperatures are analysed. Quantum tunneling mechanism results, based on Landauer-Buttiker formalization of non-equilibrium Green's function within ballistic limits, shows high peak current with 2 nm triple barrier structure and achieve high peak to valley ratio as compared to other barrier structure. Significantly, comparison helps in analyzing the better device between the proposed device structures. Simulation of the device has been performed with the use of Nextnano3 tool which confirms the various results presented in this research.