کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349217 | 1388098 | 2018 | 44 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and gas sensing properties of vertically aligned Si nanowires
ترجمه فارسی عنوان
خواص ساختاری و حساس ساختن نانوسیمهای سیلیکونی به صورت عمودی
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
چکیده انگلیسی
In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H2O2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top-top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (Rg/Ra = 11.5 â¼Â 17.1) to H2 gas (10-50 ppm) at 100 °C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top-top electrode structure that are fully compatible with well-developed Si technologies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 427, Part B, 1 January 2018, Pages 215-226
Journal: Applied Surface Science - Volume 427, Part B, 1 January 2018, Pages 215-226
نویسندگان
Ali Mirzaei, Sung Yong Kang, Sun-Woo Choi, Yong Jung Kwon, Myung Sik Choi, Jae Hoon Bang, Sang Sub Kim, Hyoun Woo Kim,