Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing

The relationship between the surface characterization after chemical mechanical polishing (CMP) and the size of the silica (SiO2) abrasive used for CMP of gallium nitride (GaN) substrates was investigated in detail. Atomic force microscope was used for measuring the surface morphology, pit feature, pit depth distribution, and atomic step-terrace structure. With the decrease of SiO2 abrasive size, the pit depth reduced and the atomic step-terrace structure became more whole with smaller damage area, resulting in smaller roughness. For tiny-sized SiO2 abrasive, an almost complete atomic step-terrace structure with 0.0523 nm roughness was achieved. On the other hand, in order to acquire higher removal, Pt/C nanoparticle was employed as a catalyst in CMP slurry. The result indicates that when Pt/C catalyst content was reached to 1.0 ppm, material removal rate was increased by 47.69% compared to that by none of the catalyst, and besides, the pit depth reduced and the surface atomic step-terrace structure was not destroyed. The Pt/C nanoparticle is proved to be the promising catalyst to the surface preparation of super-hard and inert materials with high efficiency and good surface.