کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5351243 1503667 2014 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Controlled synthesis of transition metal dichalcogenide thin films for electronic applications
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Controlled synthesis of transition metal dichalcogenide thin films for electronic applications
چکیده انگلیسی

- Controlled and scalable growth of 2D transition metal dichalcogenide thin films by vapour phase sulfurisation of predeposited metal films is demonstrated.
- These films are characterised thoroughly with assorted forms of spectroscopy and electron microscopy, evidencing their high quality.
- A simple integration scheme, based on complementary shadow masks, is proposed for the production of electronic devices from these films.
- A NH3 sensor, with a sensitivity of 400 ppb, is demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 297, 1 April 2014, Pages 139-146
نویسندگان
, , , , , , , , ,