Low temperature SiNx:H films deposited by inductively coupled plasma for solar cell applications

► Low-frequency inductively coupled SiH4 + N2 + H2 plasma is innovatively employed to deposit silicon nitride thin film. ► The deposition temperature is very low (100 °C) and the deposition rate is competitive with that of PECVD. ► The surface recombination velocity in n-type Si (2-3 Ω cm) is reduced to 36 cm/s without post-deposition annealing. ► The chemical compositions and refractive index of SiN can be modulated by altering the gas flow rate ratio of N2/SiH4.