کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5355322 1503578 2016 23 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The realization of half-metal and spin-semiconductor for metal adatoms on arsenene
ترجمه فارسی عنوان
تحقق نیمه فلزی و اسپین نیمه هادی برای آداپتورهای فلزی بر روی آرسنس
کلمات کلیدی
آرسنن، نیمه فلزی، اسپین نیمه هادی، جذب، اصول اولیه،
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
چکیده انگلیسی
First-principles calculations have been performed to study the adsorption of 15 different metal adatoms on silicenelike arsenene. The adsorption energies, geometries, density of states, dipole moments, work functions, net magnetic moments and Bader charges transferred from adatoms to arsenene sheet are calculated. All of the 15 metal adatoms on arsenene have binding energies larger than cohesive energies of the bulk metal, implying that stable adsorbates can be formed. As a result of the localized states originating from adatoms, the adsorption systems show a rich variety of electronic properties, such as metal, half-metal, semiconducting, and spin-semiconducting behaviors. The Co doped arsenene displays a half-metal property. The adsorption of Cu, Ag, and Au turns semiconducting arsenene into a narrow gap spin-semiconductor. These results indicate potential applications of functionalizations of silicenelike arsenene with metal adatoms, in particular for spintronics and dilute magnetic semiconductor materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 390, 30 December 2016, Pages 60-67
نویسندگان
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